The Fact About N type Ge That No One Is Suggesting

s is with the substrate product. The lattice mismatch contributes to a sizable buildup of pressure energy in Ge layers epitaxially developed on Si. This pressure Vitality is mostly relieved by two mechanisms: (i) era of lattice dislocations on the interface (misfit dislocations) and (ii) elastic deformation of both of those the substrate as well as

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